semix453gb176hds ? by semikron rev. 15 ? 16.12.2009 1 semix ? 3s gb trench igbt modules semix453gb176hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welders absolute maximum ratings symbol conditions values unit igbt v ces 1700 v i c t j = 150 c t c =25c 444 a t c =80c 315 a i cnom 300 a i crm i crm = 2xi cnom 600 a v ges -20 ... 20 v t psc v cc = 1000 v v ge 20 v v ces 1700 v t j = 125 c 10 s t j -55 ... 150 c inverse diode i f t j = 150 c t c =25c 545 a t c =80c 365 a i fnom 300 a i frm i frm = 2xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 2900 a t j -40 ... 150 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =300a v ge =15v chiplevel t j =25c 22.45v t j = 125 c 2.45 2.9 v v ce0 t j =25c 11.2v t j = 125 c 0.9 1.1 v r ce v ge =15v t j =25c 3.3 4.2 m ? t j = 125 c 5.2 6.0 m ? v ge(th) v ge =v ce , i c = 12 ma 5.2 5.8 6.4 v i ces v ge =0v v ce = 1700 v t j =25c 0.1 0.3 ma t j = 125 c ma c ies v ce =25v v ge =0v f=1mhz 26.4 nf c oes f=1mhz 1.10 nf c res f=1mhz 0.88 nf q g v ge =- 8 v...+ 15 v 2799 nc r gint t j =25c 2.50 ? t d(on) v cc = 1200 v i c =300a r g on =4.3 ? r g off =4.3 ? t j = 125 c 335 ns t r t j = 125 c 70 ns e on t j = 125 c 215 mj t d(off) t j = 125 c 990 ns t f t j = 125 c 150 ns e off t j = 125 c 125 mj r th(j-c) per igbt 0.071 k/w
semix453gb176hds 2 rev. 15 ? 16.12.2009 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =300a v ge =0v chip t j =25c 1.5 1.70 v t j = 125 c 1.4 1.6 v v f0 t j =25c 0.9 1.1 1.3 v t j = 125 c 0.7 0.9 1.1 v r f t j =25c 1.3 1.3 1.3 m ? t j = 125 c 1.8 1.8 1.8 m ? i rrm i f =300a di/dt off = 4700 a/s v ge =-15v v cc = 1200 v t j = 125 c 350 a q rr t j = 125 c 115 c e rr t j = 125 c 65 mj r th(j-c) per diode 0.11 k/w module l ce 20 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.04 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 300 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 3s gb trench igbt modules semix453gb176hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welders
semix453gb176hds ? by semikron rev. 15 ? 16.12.2009 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
semix453gb176hds 4 rev. 15 ? 16.12.2009 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
semix453gb176hds ? by semikron rev. 15 ? 16.12.2009 5 semix 3s spring configuration
semix453gb176hds 6 rev. 15 ? 16.12.2009 ? by semikron this technical information specifies semiconductor devices. no warranty or guarantee expressed or implied is made regarding del ivery, performance or suitability.
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